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U.S. Call for Papers

Papers | General Information | Paper Topics | Final Announcement

Papers

Format for Abstracts

Abstracts should be in a two-page format—approximately 500 words of text on the first page with supporting figures on the second page. Original photographs or good half-tones should be included. On the abstract, please indicate the author to whom correspondence should be addressed and include mailing address, telephone number, fax number, and (particularly helpful) e-mail address.

Content

The abstracts are the basis for the selection process of presentations at the conference. Only those dealing with innovations and indicating specific results can be accepted by the program committee. Please highlight the significance relative to improving the general understanding of the materials science, physical, chemical, integration, and/or applications issues of advanced metallization and interconnect systems.

General Information

The papers presented at the conference will be published by the Materials Research Society. In the past, the books resulting from this meeting have been very popular, and have found highest acceptance as information sources for advanced metallization.

Abstract Deadline Extended: July 10, 2009
 Later submissions will be considered on a case-by-case basis.

Notification of authors: August 7, 2009.
Upon notification, authors will be requested to confirm their intention to participate in the conference.

Updated! Final papers are due: October 25, 2009

Where to send the abstract

Melody Wells
Continuing Education in Engineering
UC Berkeley Extension
1995 University Avenue, Suite 110
Berkeley, CA 94704-7000
phone: (510) 642-4151
fax: (510) 642-6027
e-mail: amc@unex.berkeley.edu

Please note: All abstracts submitted electronically must be a PDF file. All fonts must be embedded in the PDF file.

Paper Topics

Metallization, material science and interfaces
  • Advanced deposition techniques and kinetics
  • Nucleation and adhesion studies
  • Diffusion barrier performance


    • Interconnect thin film microcharacterization
  • Electrical and mechanical properties
  • Morphology evolution and stability


    • Advanced semiconductor device architecture
  • Ultra low-k dielectrics
  • Metal and dielectric thin film barriers
  • High-k and ferroelectric capacitors
  • Inductors, capacitors, etc., in the wiring levels
  • Advanced wiring schemes (e.g., for embedded DRAM, system-on-a-chip, etc.)
  • Vertical (3D) interconnects
  • Nano-interconnects (CNTs, Si nano wires)
  • Nano technologies for advanced metallization (SAM)
  • Metal gate technology
  • RF interconnects
  • Interaction of packaging with on-chip interconnects


    • Process modeling
  • Advancements in CVD and PVD deposition
  • Electrochemical and electroless deposition
  • Chemical mechanical polishing
  • Novel deposition and planarization techniques


    • Multilevel process integration issues
  • System-on-a-chip
  • 3D system integration
  • Novel interconnect system concepts
  • Chip interconnect/packaging interface issues
  • MEMS metallization issues and solutions
  • Advanced patterning and etching processes
  • Damascene and dual-damascene techniques
  • Barrier/liner/fill technology
  • Integration with ultra low-k dielectrics


    • Thin film metallization for solar cells
  • Electrochemical processes
  • Vacuum processes
  • Ink and other low-temperature processes


    • Reliability and performance data and simulations
  • Dual damascene process defects
  • Electromigration and stress migration
  • Dielectric reliability and diffusion studies
  • Adhesion, corrosion, and other stress testing
  • Reliability of active chips with Cu and/or ultra low-k
  • Bonding and packaging issues for advanced interconnects


    • Final Announcement

    Contact us to receive a copy of the final conference announcement, expected to be available in June 2009:

    phone: (510) 642-4151
    fax: (510) 642-6027
    e-mail: amc@unex.berkeley.edu