Overview
This conference is the twenty-sixth in a series devoted to leading-edge research in the field of advanced metallization and 3-D integration for ULSI IC applications. The objective of this meeting is to provide a forum for open discussion of critical issues affecting state-of-the-art and future directions in interconnect systems. Topics include both fundamental and applied research, as well as advanced interconnect materials issues, introduction to manufacturing, unit process development, full integration data, interconnect reliability, and IC wiring scaling.
Copper interconnect technology will continue to be a major thrust for the Advanced Metallization Conference. Successful fabrication of copper interconnects is challenging and necessitates that the industry adopt novel technologies and develop innovative solutions to metallization issues. The industry is developing next generation nano-scale interconnects incorporating novel ultra low-k materials, ultra-thin barrier and capping layers, and continuously looking for significant performance improvements without sacrificing reliability.
Invited speakers at the conference address the challenges facing the industry in achieving the goal of improving the interconnect schemes and keeping IC metallization as one of the key enabling technologies leading the rapid progress and growth of ULSI IC technology. They will describe state-of-the-art and future technologies that address those challenges.
The conference encourages the submission of papers that deal with ULSI IC metallization and associated topics such as ultra low-k dielectrics, scaling effects on resistance, diffusion barriers, metal/dielectric planarization emphasizing CMP, electrochemical and electroless deposition processes in advanced metallization, novel interconnect systems concepts such as vertical, optical and RF issues, and chip interconnect/packaging interface, including 3-D integration and metallization technologies for micro-system-technology applications.
In association with the U.S. session, an Asian session of this conference will be held October 19–21, 2009 in Tokyo, Japan.
U.S. Schedule
Monday, October 12Conference registration and reception: 6-8 pm
Tuesday, October 13
Conference registration: 8-8:30 am
Technical sessions: 8:30 am-5:30 pm
Poster viewing and vendor display: 11 am-10 pm
Poster session, vendor display, and reception: 5:30-8 pm
Wednesday, October 14
Technical sessions: 8:30 am-5:30 pm
Thursday, October 15
Technical sessions: 8:30 am-5:30 pm
ADMETA 2009 19th Asian Session
This conference is held in Tokyo, Japan:
Schedule
Tutorial: October 19, 2009Workshop: October 19, 2009
Conference: October 20–21, 2009
Conference location
Sanjo Conference HallThe University of Tokyo
Bunkyo-ku, Tokyo, Japan
Abstract deadline
June 12, 2009Submission of abstracts for Asian conference
Abstracts should be written only in English and be camera-ready printed on two pages of A4 white paper. Send an original by PDF file.
ADMETA 2009: 19th Asian Committee Members
Executive Committee MembersY. SHIMOGAKI, The University of Tokyo (Chairperson)
K. UENO, Shibaura Institute of Technology (Vice Chairperson)
S. KONDOH, Selete (Program)
N. SHIMIZU, Fujitsu Microelectronics Ltd. (Tutorial)
T. IMORI, Nippon Mining & Metals (General Arrangements)
N. SHIMOYAMA, NTT Microsystem Integration Laboratories (Publicity)
T. FUKUDA, Future Advanced Technology Research Laboratory (Financial)
Committee Members
K. ABE, Hitachi Chemical
N. AOI, Panasonic
T. ASAI, Renesas
D.L. DIEHL, Applied Materials Japan
S. HIZUME, Novellus Systems Japan
A. HOSHINO, Canon ANELVA
F. ITO, NEC
T. KAITSUKA, Tokyo Electron
J. KAWAHARA, NEC Electronics
Y. KAWAMOTO, CASMAT
H. KAWASAKI, Mitsubishi Heavy Industries
T. KINOSHITA, Sharp
S. KODAIRA, ULVAC
J. KOIKE, Tohoku University
T. KOKUBO, JSR Corporation
E. KONDO, Yamanashi University
H. MACIHDA, The University of Tokyo/Gas Phase Growth Ltd.
O. NAKATSUKA, Nagoya University
T. NOGAMI, IBM
M. OHTSUKA, Toshiba
H. SHIBATA, Toshiba
T. SHIMAZU, Mitsubishi Heavy Industries
H. SHINRIKI, ASM Japan
M. SUGIYAMA, The University of Tokyo
S. TAKAHASHI, Sony
M.B. TAKEYAMA, Kitami Institute of Technology
T. TAMARU, Hitachi
K. TOKUSHIGE, Ebara
Y. TSUCHIYA, NEC Electronics
Y. UCHIDA, Teikyo University
LIH J. CHEN, National Tsing Hua University
YOUNG-CHANG JOO, Seoul National University
RAKESH KUMAR, A*STAR Institute of Microelectronics
GI-HEYUN CHOI, Samsung Electronics
HYUNGJUN KIM, Pohang University of Science and Technology
CHIH-CHIEN LIU, United Microelectronics Corp.
WINSTON S. SHUE, Taiwan Semiconductor Manufacturing Company
JIN-GOO PARK, Hanyang University
Advisory Members
Y. HORIIKE, NIMS
T. KIKKAWA, Hiroshima University
N. KOBAYASHI, ASM Japan
H. KOMIYAMA, The University of Tokyo
K. MASU, Tokyo Institute of Technology
M. MURAKAMI, Ritsumeikan
T. OHBA, The University of Tokyo
A. OHSAKI, Renesas
A. OHTA, The University of Tokyo
S. SHINGUBARA, Kansai University
K. TSUBOUCHI, Tohoku University
M. TSUJIMURA, Ebara
Y. YASUDA, Kochi University of Technology
T. YODA, Toshiba
S. ZAIMA, Nagoya University
Secretary
M. YOSHIDA, ADMETA Secretary
ADMETA 2009: 19th Asian Session Secretary
1-25 Kanda-sakumacho,
Akihabara-Konike Bldg. 3F
Chiyoda-ku, Tokyo 101-0025, Japan
TEL: +81-3-5207-8812
FAX: +81-3-5207-8816
E-mail: jimukyoku@admeta.org
Website: www.admeta.org
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