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Berkeley Global
Creating state-of-the-art IC design requires an in-depth understanding of basic characteristics of semiconductor devices and their second-order effects and device modeling. This course is ideal if you are a working professional who has no experience in IC design yet are interested in increasing your understanding of semiconductor devices and their modeling to begin your integrated-circuit design career. Study bipolar junction transistors and metal-oxide semiconductors, with an emphasis on physical concepts, operation principles, second-order effects, and modeling and simulation. You complete an individual project, with topic options that include nanoelectronics, transistor scaling and future trends, recent breakthroughs and real-world issues in complementary metal–oxide–semiconductor (CMOS) nanotechnology ranging from 90nm down to 22nm, CMOS device design and performance parameters, and future trends in the statistical IC design in nanoelectronics.
Prerequisites:
You should complete the following course: Introduction to Semiconductor Devices EL ENG X481.1
Or you should possess a working knowledge of basic solid-state electronics, such as:
- Intrinsic and extrinsic semiconductors (intrinsic carrier concentration, donors and acceptors)
- Carrier transport phenomena (drift and diffusion)
- Depletion layer of p–n junctions (concepts and electrostatics)
- Minority carrier concentration distribution of p–n junctions (forward and reverse bias)
- Junction capacitance of p–n junctions (depletion and diffusion capacitance)
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Fall enrollment opens on June 20!